SI1926DL-T1-GE3 - MOSFET 2N-CH 60V 0.37A SOT363

Tootja arv

SI1926DL-T1-GE3

Sisemine osa number

ABC-SI1926DL-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 60V 0.37A SOT363

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4029851 Pieces

Viide Hind

~~USD 0.081225~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI1926DL-T1-GE3 laos müüa.

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spetsifikatsioonid SI1926DL-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1926DL-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 60V 0.37A SOT363

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 370mA

Rds sees (max) @ id, Vgs : 1.4 Ohm @ 340mA, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 1.4nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 18.5pF @ 30V

Võimsus - max : 510mW

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 6-TSSOP, SC-88, SOT-363

Tarnija seadme pakett : SC-70-6 (SOT-363)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI192 , SI1926D

dokumendid SI1926DL-T1-GE3

andmelehe : SI1926DL-T1-GE3.pdf

Seotud tooted SI1926DL-T1-GE3 Vishay Siliconix

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