IXFH12N100P - MOSFET N-CH 1000V 12A TO-247

Tootja arv

IXFH12N100P

Sisemine osa number

ABC-IXFH12N100P

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 1000V 12A TO-247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

142000 Pieces

Viide Hind

~~USD 2.634335~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFH12N100P laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFH12N100P

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFH12N100P

tootja : IXYS

kirjeldus : MOSFET N-CH 1000V 12A TO-247

seeria : HiPerFET™, PolarP2™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 1000V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.05 Ohm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 80nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4080pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 463W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-247AD (IXFH)

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFH1

dokumendid IXFH12N100P

andmelehe : IXFH12N100P.pdf

Seotud tooted IXFH12N100P IXYS

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