SI3867DV-T1-GE3 - MOSFET P-CH 20V 3.9A 6-TSOP

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SI3867DV-T1-GE3

Sisemine osa number

ABC-SI3867DV-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 20V 3.9A 6-TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

77940 Pieces

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~~USD 0~~

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ABC Semiconductor on SI3867DV-T1-GE3 laos müüa.

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spetsifikatsioonid SI3867DV-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3867DV-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 20V 3.9A 6-TSOP

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 3.9A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 51 mOhm @ 5.1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.1W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-TSOP

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI386 , SI3867D

dokumendid SI3867DV-T1-GE3

andmelehe : SI3867DV-T1-GE3.pdf

Seotud tooted SI3867DV-T1-GE3 Vishay Siliconix

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