H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

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H7N1002LSTL-E

Sisemine osa number

ABC-H7N1002LSTL-E

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 100V LDPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

86944 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on H7N1002LSTL-E laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid H7N1002LSTL-E

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : H7N1002LSTL-E

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 100V LDPAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 75A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 155nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 9700pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 100W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-LDPAK

Pakett / kohver : SC-83

kaal : -

tingimus : Uus ja originaal

seotud lingid : H7N1 , H7N100

dokumendid H7N1002LSTL-E

andmelehe : H7N1002LSTL-E.pdf

Seotud tooted H7N1002LSTL-E Renesas Electronics America

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