IRF610STRRPBF - MOSFET N-CH 200V 3.3A D2PAK

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IRF610STRRPBF

Sisemine osa number

ABC-IRF610STRRPBF

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 200V 3.3A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

637161 Pieces

Viide Hind

~~USD 0.51372~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRF610STRRPBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRF610STRRPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRF610STRRPBF

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 200V 3.3A D2PAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 3.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.5 Ohm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.2nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 140pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3W (Ta), 36W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D2PAK

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRF6 , IRF610

dokumendid IRF610STRRPBF

andmelehe : IRF610STRRPBF.pdf

Seotud tooted IRF610STRRPBF Vishay Siliconix

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