SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Tootja arv

SI7900AEDN-T1-GE3

Sisemine osa number

ABC-SI7900AEDN-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 20V 6A PPAK 1212-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1174040 Pieces

Viide Hind

~~USD 0.2788~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI7900AEDN-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI7900AEDN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7900AEDN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 20V 6A PPAK 1212-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual) Common Drain

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 6A

Rds sees (max) @ id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 900mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 16nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

Võimsus - max : 1.5W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : PowerPAK® 1212-8 Dual

Tarnija seadme pakett : PowerPAK® 1212-8 Dual

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI790 , SI7900AE

dokumendid SI7900AEDN-T1-GE3

andmelehe : SI7900AEDN-T1-GE3.pdf

Seotud tooted SI7900AEDN-T1-GE3 Vishay Siliconix

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