SIHB33N60ET1-GE3 - MOSFET N-CH 600V 33A TO263

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SIHB33N60ET1-GE3

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ABC-SIHB33N60ET1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 600V 33A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

192568 Pieces

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~~USD 1.9425~~

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ABC Semiconductor on SIHB33N60ET1-GE3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIHB33N60ET1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHB33N60ET1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 600V 33A TO263

seeria : E

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 33A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 99 mOhm @ 16.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 150nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3508pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 278W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (D²Pak)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHB3 , SIHB33N6

dokumendid SIHB33N60ET1-GE3

andmelehe : SIHB33N60ET1-GE3.pdf

Seotud tooted SIHB33N60ET1-GE3 Vishay Siliconix

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