DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

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DMJ70H900HJ3

Sisemine osa number

ABC-DMJ70H900HJ3

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 651V 800V TO251

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

452228 Pieces

Viide Hind

~~USD 0.7238~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMJ70H900HJ3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMJ70H900HJ3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMJ70H900HJ3

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 651V 800V TO251

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 700V

Praegune - pidev äravool (id) @ 25 ° C : 7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 18.4nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 603pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 68W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-251

Pakett / kohver : TO-251-3, IPak, Short Leads

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMJ7 , DMJ70H

dokumendid DMJ70H900HJ3

andmelehe : DMJ70H900HJ3.pdf

Seotud tooted DMJ70H900HJ3 Diodes Incorporated

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