CSD17579Q3AT - MOSFET N-CH 30V 35A 8VSON

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CSD17579Q3AT

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ABC-CSD17579Q3AT

tootja

T-I

Lühikirjeldus

MOSFET N-CH 30V 35A 8VSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1623629 Pieces

Viide Hind

~~USD 0.2016~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on CSD17579Q3AT laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid CSD17579Q3AT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : CSD17579Q3AT

tootja : T-I

kirjeldus : MOSFET N-CH 30V 35A 8VSON

seeria : NexFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 20A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 10.2 mOhm @ 8A, 10V

Vgs (th) (maksimaalselt) @ id : 1.9V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 998pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 3.2W (Ta), 29W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-VSONP (3x3.15)

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : CSD1 , CSD175

dokumendid CSD17579Q3AT

andmelehe : CSD17579Q3AT.pdf

Seotud tooted CSD17579Q3AT T-I

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