PMV130ENEA/DG/B2R - MOSFET N-CH 40V 2.1A TO236AB

Tootja arv

PMV130ENEA/DG/B2R

Sisemine osa number

ABC-PMV130ENEA/DG/B2R

tootja

Nexperia USA Inc.

Lühikirjeldus

MOSFET N-CH 40V 2.1A TO236AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

40638 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on PMV130ENEA/DG/B2R laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid PMV130ENEA/DG/B2R

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : PMV130ENEA/DG/B2R

tootja : Nexperia USA Inc.

kirjeldus : MOSFET N-CH 40V 2.1A TO236AB

seeria : Automotive, AEC-Q101

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 2.1A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 120 mOhm @ 1.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 3.6nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 170pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 5W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-236AB

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : PMV13 , PMV130EN

dokumendid PMV130ENEA/DG/B2R

andmelehe : PMV130ENEA/DG/B2R.pdf

Seotud tooted PMV130ENEA/DG/B2R Nexperia USA Inc.

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