TSM60NB190CM2 RNG - MOSFET N-CH 600V 18A TO263

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TSM60NB190CM2 RNG

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ABC-TSM60NB190CM2 RNG

tootja

Taiwan Semiconductor Corporation

Lühikirjeldus

MOSFET N-CH 600V 18A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

439327 Pieces

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~~USD 0.74505~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TSM60NB190CM2 RNG laos müüa.

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spetsifikatsioonid TSM60NB190CM2 RNG

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TSM60NB190CM2 RNG

tootja : Taiwan Semiconductor Corporation

kirjeldus : MOSFET N-CH 600V 18A TO263

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 190 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 31nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1273pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 150.6W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (D²Pak)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : TSM60 , TSM60NB1

dokumendid TSM60NB190CM2 RNG

andmelehe : TSM60NB190CM2 RNG.pdf

Seotud tooted TSM60NB190CM2 RNG Taiwan Semiconductor Corporation

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