APT34N80B2C3G - MOSFET N-CH 800V 34A T-MAX

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APT34N80B2C3G

Sisemine osa number

ABC-APT34N80B2C3G

tootja

Microsemi Corporation

Lühikirjeldus

MOSFET N-CH 800V 34A T-MAX

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

73701 Pieces

Viide Hind

~~USD 5.71~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on APT34N80B2C3G laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid APT34N80B2C3G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : APT34N80B2C3G

tootja : Microsemi Corporation

kirjeldus : MOSFET N-CH 800V 34A T-MAX

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 34A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 145 mOhm @ 22A, 10V

Vgs (th) (maksimaalselt) @ id : 3.9V @ 2mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 355nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4510pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 417W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : T-MAX™ [B2]

Pakett / kohver : TO-247-3 Variant

kaal : -

tingimus : Uus ja originaal

seotud lingid : APT3 , APT34N

dokumendid APT34N80B2C3G

andmelehe : APT34N80B2C3G.pdf

Seotud tooted APT34N80B2C3G Microsemi Corporation

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