TPN22006NH,LQ - MOSFET N CH 60V 9A 8-TSON

Tootja arv

TPN22006NH,LQ

Sisemine osa number

ABC-TPN22006NH,LQ

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N CH 60V 9A 8-TSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2052190 Pieces

Viide Hind

~~USD 0.1595~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TPN22006NH,LQ laos müüa.

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spetsifikatsioonid TPN22006NH,LQ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TPN22006NH,LQ

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N CH 60V 9A 8-TSON

seeria : U-MOSVIII-H

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 6.5V, 10V

Rds sees (max) @ id, Vgs : 22 mOhm @ 4.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 100µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 710pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 700mW (Ta), 18W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-TSON Advance (3.3x3.3)

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : TPN2 , TPN220

dokumendid TPN22006NH,LQ

andmelehe : TPN22006NH,LQ.pdf

Seotud tooted TPN22006NH,LQ Toshiba Semiconductor and Storage

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