IRFH8202TRPBF - MOSFET N-CH 25V 100A PQFN

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IRFH8202TRPBF

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ABC-IRFH8202TRPBF

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 25V 100A PQFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

866425 Pieces

Viide Hind

~~USD 0.377785~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFH8202TRPBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFH8202TRPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFH8202TRPBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 25V 100A PQFN

seeria : HEXFET®, StrongIRFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 47A (Ta), 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.05 mOhm @ 50A, 10V

Vgs (th) (maksimaalselt) @ id : 2.35V @ 150µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 110nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7174pF @ 13V

FET funktsioon : -

Võimsuse hajumine (max) : 3.6W (Ta), 160W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-PQFN (5x6)

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFH , IRFH82

dokumendid IRFH8202TRPBF

andmelehe : IRFH8202TRPBF.pdf

Seotud tooted IRFH8202TRPBF Infineon Technologies

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