FQU2N90TU - MOSFET N-CH 900V 1.7A IPAK

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FQU2N90TU

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ABC-FQU2N90TU

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 900V 1.7A IPAK

RoHS-staatus

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1-2 päeva

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ABC Semiconductor on FQU2N90TU laos müüa.

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spetsifikatsioonid FQU2N90TU

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQU2N90TU

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 900V 1.7A IPAK

seeria : QFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 900V

Praegune - pidev äravool (id) @ 25 ° C : 1.7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 7.2 Ohm @ 850mA, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 500pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 50W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : I-PAK

Pakett / kohver : TO-251-3 Short Leads, IPak, TO-251AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQU , FQU2

dokumendid FQU2N90TU

andmelehe : FQU2N90TU.pdf

Seotud tooted FQU2N90TU ON Semiconductor

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