BSP123L6327HTSA1 - MOSFET N-CH 100V 370MA SOT223

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BSP123L6327HTSA1

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ABC-BSP123L6327HTSA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 370MA SOT223

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

105008 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSP123L6327HTSA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSP123L6327HTSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSP123L6327HTSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 370MA SOT223

seeria : SIPMOS®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 370mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.8V, 10V

Rds sees (max) @ id, Vgs : 6 Ohm @ 370mA, 10V

Vgs (th) (maksimaalselt) @ id : 1.8V @ 50µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 2.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 70pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.79W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-SOT223-4

Pakett / kohver : TO-261-4, TO-261AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSP12 , BSP123L6

dokumendid BSP123L6327HTSA1

andmelehe : BSP123L6327HTSA1.pdf

Seotud tooted BSP123L6327HTSA1 Infineon Technologies

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