IXFT23N80Q - MOSFET N-CH 800V 23A TO-268D3

Tootja arv

IXFT23N80Q

Sisemine osa number

ABC-IXFT23N80Q

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 800V 23A TO-268D3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

69940 Pieces

Viide Hind

~~USD 8.69~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFT23N80Q laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFT23N80Q

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFT23N80Q

tootja : IXYS

kirjeldus : MOSFET N-CH 800V 23A TO-268D3

seeria : HiPerFET™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 23A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 420 mOhm @ 500mA, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 3mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 130nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4900pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 500W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-268

Pakett / kohver : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFT2

dokumendid IXFT23N80Q

andmelehe : IXFT23N80Q.pdf

Seotud tooted IXFT23N80Q IXYS

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