SPD50N03S207GBTMA1 - MOSFET N-CH 30V 50A TO252-3

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SPD50N03S207GBTMA1

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ABC-SPD50N03S207GBTMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 50A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

63040 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SPD50N03S207GBTMA1 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SPD50N03S207GBTMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SPD50N03S207GBTMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 50A TO252-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 50A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 7.3 mOhm @ 50A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 85µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 46.5nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2170pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 136W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SPD50N , SPD50N03S

dokumendid SPD50N03S207GBTMA1

andmelehe : SPD50N03S207GBTMA1.pdf

Seotud tooted SPD50N03S207GBTMA1 Infineon Technologies

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