IRFD224 - MOSFET N-CH 250V 630MA 4-DIP

Tootja arv

IRFD224

Sisemine osa number

ABC-IRFD224

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 250V 630MA 4-DIP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

632100 Pieces

Viide Hind

~~USD 0.51783~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFD224 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFD224

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFD224

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 250V 630MA 4-DIP

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 250V

Praegune - pidev äravool (id) @ 25 ° C : 630mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.1 Ohm @ 380mA, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 14nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 260pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : 4-DIP, Hexdip, HVMDIP

Pakett / kohver : 4-DIP (0.300", 7.62mm)

kaal : -

tingimus : Uus ja originaal

seotud lingid : IR , IRF

dokumendid IRFD224

andmelehe : IRFD224.pdf

Seotud tooted IRFD224 Vishay Siliconix

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