SI3585CDV-T1-GE3 - MOSFET N/P-CH 20V 3.9A 6TSOP

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SI3585CDV-T1-GE3

Sisemine osa number

ABC-SI3585CDV-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P-CH 20V 3.9A 6TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3022383 Pieces

Viide Hind

~~USD 0.1083~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI3585CDV-T1-GE3 laos müüa.

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spetsifikatsioonid SI3585CDV-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3585CDV-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P-CH 20V 3.9A 6TSOP

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N and P-Channel

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 3.9A, 2.1A

Rds sees (max) @ id, Vgs : 58 mOhm @ 2.5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 4.8nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 150pF @ 10V

Võimsus - max : 1.4W, 1.3W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

Tarnija seadme pakett : 6-TSOP

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI358 , SI3585CD

dokumendid SI3585CDV-T1-GE3

andmelehe : SI3585CDV-T1-GE3.pdf

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