BUK653R2-55C,127 - MOSFET N-CH 55V 120A TO220AB

Tootja arv

BUK653R2-55C,127

Sisemine osa number

ABC-BUK653R2-55C,127

tootja

NXP USA Inc.

Lühikirjeldus

MOSFET N-CH 55V 120A TO220AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

45773 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BUK653R2-55C,127 laos müüa.

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spetsifikatsioonid BUK653R2-55C,127

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BUK653R2-55C,127

tootja : NXP USA Inc.

kirjeldus : MOSFET N-CH 55V 120A TO220AB

seeria : TrenchMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 55V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 3.2 mOhm @ 25A, 10V

Vgs (th) (maksimaalselt) @ id : 2.8V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 258nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 15300pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 306W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220AB

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : BUK65 , BUK653R2

dokumendid BUK653R2-55C,127

andmelehe : BUK653R2-55C,127.pdf

Seotud tooted BUK653R2-55C,127 NXP USA Inc.

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