SI3586DV-T1-E3 - MOSFET N/P-CH 20V 2.9A 6TSOP

Tootja arv

SI3586DV-T1-E3

Sisemine osa number

ABC-SI3586DV-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N/P-CH 20V 2.9A 6TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

53625 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI3586DV-T1-E3 laos müüa.

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spetsifikatsioonid SI3586DV-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3586DV-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N/P-CH 20V 2.9A 6TSOP

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N and P-Channel

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2.9A, 2.1A

Rds sees (max) @ id, Vgs : 60 mOhm @ 3.4A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

Võimsus - max : 830mW

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

Tarnija seadme pakett : 6-TSOP

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI35 , SI3586D

dokumendid SI3586DV-T1-E3

andmelehe : SI3586DV-T1-E3.pdf

Seotud tooted SI3586DV-T1-E3 Vishay Siliconix

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