FQD10N20CTM_F080 - MOSFET N-CH 200V 7.8A DPAK

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FQD10N20CTM_F080

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ABC-FQD10N20CTM_F080

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 200V 7.8A DPAK

RoHS-staatus

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1-2 päeva

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ABC Semiconductor on FQD10N20CTM_F080 laos müüa.

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spetsifikatsioonid FQD10N20CTM_F080

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Osa number : FQD10N20CTM_F080

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 200V 7.8A DPAK

seeria : QFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 7.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 360 mOhm @ 3.9A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 26nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 510pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 50W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQD10 , FQD10N20

dokumendid FQD10N20CTM_F080

andmelehe : FQD10N20CTM_F080.pdf

Seotud tooted FQD10N20CTM_F080 ON Semiconductor

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