FQA10N80_F109 - MOSFET N-CH 800V 9.8A TO-3P

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FQA10N80_F109

Sisemine osa number

ABC-FQA10N80_F109

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 800V 9.8A TO-3P

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

40800 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FQA10N80_F109 laos müüa.

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spetsifikatsioonid FQA10N80_F109

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQA10N80_F109

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 800V 9.8A TO-3P

seeria : QFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 9.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.05 Ohm @ 4.9A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 71nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2700pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 240W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3P

Pakett / kohver : TO-3P-3, SC-65-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQA1 , FQA10N

dokumendid FQA10N80_F109

andmelehe : FQA10N80_F109.pdf

Seotud tooted FQA10N80_F109 ON Semiconductor

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