IPI075N15N3GXKSA1 - MOSFET N-CH 150V 100A TO262-3

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IPI075N15N3GXKSA1

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ABC-IPI075N15N3GXKSA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 150V 100A TO262-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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118184 Pieces

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~~USD 3.165~~

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spetsifikatsioonid IPI075N15N3GXKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPI075N15N3GXKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 150V 100A TO262-3

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 150V

Praegune - pidev äravool (id) @ 25 ° C : 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 8V, 10V

Rds sees (max) @ id, Vgs : 7.5 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 270µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 93nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5470pF @ 75V

FET funktsioon : -

Võimsuse hajumine (max) : 300W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO262-3

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPI07 , IPI075N1

dokumendid IPI075N15N3GXKSA1

andmelehe : IPI075N15N3GXKSA1.pdf

Seotud tooted IPI075N15N3GXKSA1 Infineon Technologies

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