NP33N06YDG-E1-AY - MOSFET N-CH 60V 33A 8HSON

Tootja arv

NP33N06YDG-E1-AY

Sisemine osa number

ABC-NP33N06YDG-E1-AY

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 60V 33A 8HSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

106736 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on NP33N06YDG-E1-AY laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NP33N06YDG-E1-AY

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NP33N06YDG-E1-AY

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 60V 33A 8HSON

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 33A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 14 mOhm @ 16.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 78nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3900pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1W (Ta), 97W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-HSON

Pakett / kohver : 8-SMD, Flat Lead Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : NP33N , NP33N06Y

dokumendid NP33N06YDG-E1-AY

andmelehe : NP33N06YDG-E1-AY.pdf

Seotud tooted NP33N06YDG-E1-AY Renesas Electronics America

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