SI8821EDB-T2-E1 - MOSFET P-CH 30V MICRO FOOT

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SI8821EDB-T2-E1

Sisemine osa number

ABC-SI8821EDB-T2-E1

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 30V MICRO FOOT

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4565505 Pieces

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~~USD 0.071695~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI8821EDB-T2-E1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI8821EDB-T2-E1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI8821EDB-T2-E1

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 30V MICRO FOOT

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : -

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 135 mOhm @ 1A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 17nC @ 10V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 440pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 500mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-Microfoot

Pakett / kohver : 4-XFBGA, CSPBGA

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI882 , SI8821E

dokumendid SI8821EDB-T2-E1

andmelehe : SI8821EDB-T2-E1.pdf

Seotud tooted SI8821EDB-T2-E1 Vishay Siliconix

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