STH160N4LF6-2 - MOSFET N-CH 40V 120A H2PAK-2

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STH160N4LF6-2

Sisemine osa number

ABC-STH160N4LF6-2

tootja

STMicroelectronics

Lühikirjeldus

MOSFET N-CH 40V 120A H2PAK-2

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

40001 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on STH160N4LF6-2 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid STH160N4LF6-2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : STH160N4LF6-2

tootja : STMicroelectronics

kirjeldus : MOSFET N-CH 40V 120A H2PAK-2

seeria : DeepGATE™, STripFET™ VI

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 2.2 mOhm @ 60A, 10V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA (Min)

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 181nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 8130pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 150W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : H2Pak-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : STH1 , STH160

dokumendid STH160N4LF6-2

andmelehe : STH160N4LF6-2.pdf

Seotud tooted STH160N4LF6-2 STMicroelectronics

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