DMP2006UFGQ-7 - MOSFET BVDSS 8V-24V POWERDI3333

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DMP2006UFGQ-7

Sisemine osa number

ABC-DMP2006UFGQ-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 8V-24V POWERDI3333

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1448174 Pieces

Viide Hind

~~USD 0.226025~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMP2006UFGQ-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMP2006UFGQ-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMP2006UFGQ-7

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 8V-24V POWERDI3333

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 17.5A (Ta), 40A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.5V, 4.5V

Rds sees (max) @ id, Vgs : 5.5 mOhm @ 15A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 200nC @ 10V

VG (maksimaalselt) : ±10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7500pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 2.3W (Ta), 41W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerDI3333-8

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMP2 , DMP200

dokumendid DMP2006UFGQ-7

andmelehe : DMP2006UFGQ-7.pdf

Seotud tooted DMP2006UFGQ-7 Diodes Incorporated

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