DMN2320UFB4-7B - MOSFET N-CH 20V X2-DFN1006-3

Tootja arv

DMN2320UFB4-7B

Sisemine osa number

ABC-DMN2320UFB4-7B

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 20V X2-DFN1006-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4408404 Pieces

Viide Hind

~~USD 0.07425~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN2320UFB4-7B laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN2320UFB4-7B

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN2320UFB4-7B

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 20V X2-DFN1006-3

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 1A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 320 mOhm @ 500mA, 4.5V

Vgs (th) (maksimaalselt) @ id : 950mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.89nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 71pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 520mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : X2-DFN1006-3

Pakett / kohver : 3-XFDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN2 , DMN2320

dokumendid DMN2320UFB4-7B

andmelehe : DMN2320UFB4-7B.pdf

Seotud tooted DMN2320UFB4-7B Diodes Incorporated

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