SPB80N10L G - MOSFET N-CH 100V 80A TO-263

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SPB80N10L G

Sisemine osa number

ABC-SPB80N10L G

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 80A TO-263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

59249 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SPB80N10L G laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SPB80N10L G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SPB80N10L G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 80A TO-263

seeria : SIPMOS®

Osa olek : Discontinued at Digi-Key

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 80A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 14 mOhm @ 58A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 2mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 240nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4540pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 250W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO263-3-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SPB , SPB80

dokumendid SPB80N10L G

andmelehe : SPB80N10L G.pdf

Seotud tooted SPB80N10L G Infineon Technologies

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