FDN338P_G - INTEGRATED CIRCUIT

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FDN338P_G

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ABC-FDN338P_G

tootja

ON Semiconductor

Lühikirjeldus

INTEGRATED CIRCUIT

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

70560 Pieces

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ABC Semiconductor on FDN338P_G laos müüa.

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spetsifikatsioonid FDN338P_G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDN338P_G

tootja : ON Semiconductor

kirjeldus : INTEGRATED CIRCUIT

seeria : PowerTrench®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 1.6A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 115 mOhm @ 1.6A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6.2nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 451pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 500mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SuperSOT-3

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDN , FDN3

dokumendid FDN338P_G

andmelehe : FDN338P_G.pdf

Seotud tooted FDN338P_G ON Semiconductor

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