SI3900DV-T1-GE3 - MOSFET 2N-CH 20V 2A 6-TSOP

Tootja arv

SI3900DV-T1-GE3

Sisemine osa number

ABC-SI3900DV-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 20V 2A 6-TSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1425620 Pieces

Viide Hind

~~USD 0.2296~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI3900DV-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI3900DV-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI3900DV-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 20V 2A 6-TSOP

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2A

Rds sees (max) @ id, Vgs : 125 mOhm @ 2.4A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 4nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

Võimsus - max : 830mW

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-23-6 Thin, TSOT-23-6

Tarnija seadme pakett : 6-TSOP

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI390 , SI3900D

dokumendid SI3900DV-T1-GE3

andmelehe : SI3900DV-T1-GE3.pdf

Seotud tooted SI3900DV-T1-GE3 Vishay Siliconix

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