DMN26D0UFB4-7 - MOSFET N-CH 20V 230MA DFN

Tootja arv

DMN26D0UFB4-7

Sisemine osa number

ABC-DMN26D0UFB4-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 20V 230MA DFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

9583511 Pieces

Viide Hind

~~USD 0.034155~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN26D0UFB4-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN26D0UFB4-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN26D0UFB4-7

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 20V 230MA DFN

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 230mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.5V, 4.5V

Rds sees (max) @ id, Vgs : 3 Ohm @ 100mA, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : -

VG (maksimaalselt) : ±10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 14.1pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 350mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : X2-DFN1006-3

Pakett / kohver : 3-XFDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN2 , DMN26D

dokumendid DMN26D0UFB4-7

andmelehe : DMN26D0UFB4-7.pdf

Seotud tooted DMN26D0UFB4-7 Diodes Incorporated

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