RF4E080BNTR - MOSFET N-CH 30V 8A 8-HUML

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RF4E080BNTR

Sisemine osa number

ABC-RF4E080BNTR

tootja

Rohm Semiconductor

Lühikirjeldus

MOSFET N-CH 30V 8A 8-HUML

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2774877 Pieces

Viide Hind

~~USD 0.11796~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RF4E080BNTR laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid RF4E080BNTR

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RF4E080BNTR

tootja : Rohm Semiconductor

kirjeldus : MOSFET N-CH 30V 8A 8-HUML

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 17.6 mOhm @ 8A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 14.5nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 660pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 2W (Ta)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : HUML2020L8

Pakett / kohver : 8-PowerUDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : RF4 , RF4E0

dokumendid RF4E080BNTR

andmelehe : RF4E080BNTR.pdf

Seotud tooted RF4E080BNTR Rohm Semiconductor

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