SIZ988DT-T1-GE3 - MOSFET 2 N-CH 30V 8-POWERPAIR

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SIZ988DT-T1-GE3

Sisemine osa number

ABC-SIZ988DT-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2 N-CH 30V 8-POWERPAIR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1148903 Pieces

Viide Hind

~~USD 0.2849~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIZ988DT-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIZ988DT-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIZ988DT-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2 N-CH 30V 8-POWERPAIR

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 40A (Tc), 60A (Tc)

Rds sees (max) @ id, Vgs : 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V

Vgs (th) (maksimaalselt) @ id : 2.4V @ 250µA, 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10.5nC @ 4.5V, 23.1nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1000pF @ 15V, 2425pF @ 15V

Võimsus - max : 20.2W, 40W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerWDFN

Tarnija seadme pakett : 8-PowerPair®

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIZ98 , SIZ988D

dokumendid SIZ988DT-T1-GE3

andmelehe : SIZ988DT-T1-GE3.pdf

Seotud tooted SIZ988DT-T1-GE3 Vishay Siliconix

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