TK39N60W,S1VF - MOSFET N CH 600V 38.8A TO247

Tootja arv

TK39N60W,S1VF

Sisemine osa number

ABC-TK39N60W,S1VF

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N CH 600V 38.8A TO247

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

80919 Pieces

Viide Hind

~~USD 5.2~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK39N60W,S1VF laos müüa.

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spetsifikatsioonid TK39N60W,S1VF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK39N60W,S1VF

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N CH 600V 38.8A TO247

seeria : DTMOSIV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 38.8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 65 mOhm @ 19.4A, 10V

Vgs (th) (maksimaalselt) @ id : 3.7V @ 1.9mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 110nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4100pF @ 300V

FET funktsioon : Super Junction

Võimsuse hajumine (max) : 270W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-247

Pakett / kohver : TO-247-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK39 , TK39N6

dokumendid TK39N60W,S1VF

andmelehe : TK39N60W,S1VF.pdf

Seotud tooted TK39N60W,S1VF Toshiba Semiconductor and Storage

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