SI5922DU-T1-GE3 - MOSFET 2 N-CH 30V 6A POWERPAK

Tootja arv

SI5922DU-T1-GE3

Sisemine osa number

ABC-SI5922DU-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2 N-CH 30V 6A POWERPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3267684 Pieces

Viide Hind

~~USD 0.10017~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI5922DU-T1-GE3 laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI5922DU-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI5922DU-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2 N-CH 30V 6A POWERPAK

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 6A (Tc)

Rds sees (max) @ id, Vgs : 19.2 mOhm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 7.1nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 765pF @ 15V

Võimsus - max : 10.4W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : PowerPAK® ChipFET™ Dual

Tarnija seadme pakett : PowerPAK® ChipFet Dual

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI592 , SI5922D

dokumendid SI5922DU-T1-GE3

andmelehe : SI5922DU-T1-GE3.pdf

Seotud tooted SI5922DU-T1-GE3 Vishay Siliconix

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