RS1E200BNTB - MOSFET N-CH 30V 20A 8HSOP

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RS1E200BNTB

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ABC-RS1E200BNTB

tootja

Rohm Semiconductor

Lühikirjeldus

MOSFET N-CH 30V 20A 8HSOP

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3461920 Pieces

Viide Hind

~~USD 0.09455~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RS1E200BNTB laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid RS1E200BNTB

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RS1E200BNTB

tootja : Rohm Semiconductor

kirjeldus : MOSFET N-CH 30V 20A 8HSOP

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 20A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 3.9 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 59nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3100pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 3W (Ta), 25W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-HSOP

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : RS1 , RS1E2

dokumendid RS1E200BNTB

andmelehe : RS1E200BNTB.pdf

Seotud tooted RS1E200BNTB Rohm Semiconductor

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