GT60N321(Q) - IGBT 1000V 60A 170W TO3P LH

Tootja arv

GT60N321(Q)

Sisemine osa number

ABC-GT60N321(Q)

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

IGBT 1000V 60A 170W TO3P LH

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

84915 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on GT60N321(Q) laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid GT60N321(Q)

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : GT60N321(Q)

tootja : Toshiba Semiconductor and Storage

kirjeldus : IGBT 1000V 60A 170W TO3P LH

seeria : -

Osa olek : Obsolete

IGBT tüüp : -

Pinge - kollektori emitteri jaotus (max) : 1000V

Praegune - koguja (Ic) (maksimaalselt) : 60A

Praegune - koguja impulss (Icm) : 120A

Vce (sees) (max) @ Vge, Ic : 2.8V @ 15V, 60A

Võimsus - max : 170W

Energia vahetamine : -

Sisendi tüüp : Standard

Värava laadimine : -

Td (sisse / välja) @ 25 ° C : 330ns/700ns

Testi seisund : -

Vastupidine taastumisaeg (trr) : 2.5µs

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Pakett / kohver : TO-3PL

Tarnija seadme pakett : TO-3P(LH)

kaal : -

tingimus : Uus ja originaal

seotud lingid : GT6 , GT60N

dokumendid GT60N321(Q)

andmelehe : GT60N321(Q).pdf

Seotud tooted GT60N321(Q) Toshiba Semiconductor and Storage

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