SI4866BDY-T1-GE3 - MOSFET N-CH 12V 21.5A 8-SOIC

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SI4866BDY-T1-GE3

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ABC-SI4866BDY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 12V 21.5A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

43197 Pieces

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ABC Semiconductor on SI4866BDY-T1-GE3 laos müüa.

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spetsifikatsioonid SI4866BDY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4866BDY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 12V 21.5A 8-SOIC

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 21.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 5.3 mOhm @ 12A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 80nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5020pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 4.45W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI486 , SI4866BD

dokumendid SI4866BDY-T1-GE3

andmelehe : SI4866BDY-T1-GE3.pdf

Seotud tooted SI4866BDY-T1-GE3 Vishay Siliconix

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