SI1431DH-T1-GE3 - MOSFET P-CH 30V 1.7A SOT363

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SI1431DH-T1-GE3

Sisemine osa number

ABC-SI1431DH-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 30V 1.7A SOT363

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2736251 Pieces

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~~USD 0.119625~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI1431DH-T1-GE3 laos müüa.

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spetsifikatsioonid SI1431DH-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1431DH-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 30V 1.7A SOT363

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 1.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 200 mOhm @ 2A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 100µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 4nC @ 4.5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 950mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-70-6 (SOT-363)

Pakett / kohver : 6-TSSOP, SC-88, SOT-363

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI143 , SI1431D

dokumendid SI1431DH-T1-GE3

andmelehe : SI1431DH-T1-GE3.pdf

Seotud tooted SI1431DH-T1-GE3 Vishay Siliconix

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