SIRA58ADP-T1-RE3 - MOSFET N-CH 40V

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SIRA58ADP-T1-RE3

Sisemine osa number

ABC-SIRA58ADP-T1-RE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 40V

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1159375 Pieces

Viide Hind

~~USD 0.282325~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIRA58ADP-T1-RE3 laos müüa.

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spetsifikatsioonid SIRA58ADP-T1-RE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIRA58ADP-T1-RE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 40V

seeria : TrenchFET® Gen IV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 32.3A (Ta), 109A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 2.65 mOhm @ 15A, 10V

Vgs (th) (maksimaalselt) @ id : 2.4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 61nC @ 10V

VG (maksimaalselt) : +20V, -16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3030pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 5W (Ta), 56.8W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SO-8

Pakett / kohver : PowerPAK® SO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIRA5 , SIRA58AD

dokumendid SIRA58ADP-T1-RE3

andmelehe : SIRA58ADP-T1-RE3.pdf

Seotud tooted SIRA58ADP-T1-RE3 Vishay Siliconix

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