SIB419DK-T1-GE3 - MOSFET P-CH 12V 9A SC75-6

Tootja arv

SIB419DK-T1-GE3

Sisemine osa number

ABC-SIB419DK-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 12V 9A SC75-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

42993 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIB419DK-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIB419DK-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIB419DK-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 12V 9A SC75-6

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.8V, 4.5V

Rds sees (max) @ id, Vgs : 60 mOhm @ 5.2A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11.82nC @ 5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 562pF @ 6V

FET funktsioon : -

Võimsuse hajumine (max) : 2.45W (Ta), 13.1W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SC-75-6L Single

Pakett / kohver : PowerPAK® SC-75-6L

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIB41 , SIB419D

dokumendid SIB419DK-T1-GE3

andmelehe : SIB419DK-T1-GE3.pdf

Seotud tooted SIB419DK-T1-GE3 Vishay Siliconix

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