IPP65R125C7XKSA1 - MOSFET N-CH 650V 18A TO220

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IPP65R125C7XKSA1

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ABC-IPP65R125C7XKSA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 650V 18A TO220

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

151752 Pieces

Viide Hind

~~USD 2.465~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IPP65R125C7XKSA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPP65R125C7XKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPP65R125C7XKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 650V 18A TO220

seeria : CoolMOS™ C7

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 125 mOhm @ 8.9A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 440µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 35nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1670pF @ 400V

FET funktsioon : -

Võimsuse hajumine (max) : 101W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPP65 , IPP65R12

dokumendid IPP65R125C7XKSA1

andmelehe : IPP65R125C7XKSA1.pdf

Seotud tooted IPP65R125C7XKSA1 Infineon Technologies

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