SI2304BDS-T1-E3 - MOSFET N-CH 30V 2.6A SOT23-3

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SI2304BDS-T1-E3

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ABC-SI2304BDS-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 2.6A SOT23-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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5594813 Pieces

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~~USD 0.058505~~

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ABC Semiconductor on SI2304BDS-T1-E3 laos müüa.

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spetsifikatsioonid SI2304BDS-T1-E3

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Osa number : SI2304BDS-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 2.6A SOT23-3

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 2.6A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 70 mOhm @ 2.5A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 4nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 225pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 750mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3 (TO-236)

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI230 , SI2304B

dokumendid SI2304BDS-T1-E3

andmelehe : SI2304BDS-T1-E3.pdf

Seotud tooted SI2304BDS-T1-E3 Vishay Siliconix

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