GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7

Tootja arv

GA10SICP12-263

Sisemine osa number

ABC-GA10SICP12-263

tootja

GeneSiC Semiconductor

Lühikirjeldus

TRANS SJT 1200V 25A TO263-7

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

43537 Pieces

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~~USD 13.9587~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on GA10SICP12-263 laos müüa.

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spetsifikatsioonid GA10SICP12-263

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : GA10SICP12-263

tootja : GeneSiC Semiconductor

kirjeldus : TRANS SJT 1200V 25A TO263-7

seeria : -

Osa olek : Active

FET tüüp : -

Tehnoloogia : SiC (Silicon Carbide Junction Transistor)

Tühjendage toitepingele (Vdss) : 1200V

Praegune - pidev äravool (id) @ 25 ° C : 25A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : -

Rds sees (max) @ id, Vgs : 100 mOhm @ 10A

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : -

VG (maksimaalselt) : -

Sisendmahtuvus (Ciss) (Max) @ Vds : 1403pF @ 800V

FET funktsioon : -

Võimsuse hajumine (max) : 170W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D2PAK (7-Lead)

Pakett / kohver : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

kaal : -

tingimus : Uus ja originaal

seotud lingid : GA10 , GA10SIC

dokumendid GA10SICP12-263

andmelehe : GA10SICP12-263.pdf

Seotud tooted GA10SICP12-263 GeneSiC Semiconductor

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