SIHB8N50D-GE3 - MOSFET N-CH 500V 8.7A D2PAK

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SIHB8N50D-GE3

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ABC-SIHB8N50D-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 500V 8.7A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

804776 Pieces

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~~USD 0.406725~~

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ABC Semiconductor on SIHB8N50D-GE3 laos müüa.

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spetsifikatsioonid SIHB8N50D-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHB8N50D-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 500V 8.7A D2PAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 500V

Praegune - pidev äravool (id) @ 25 ° C : 8.7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 850 mOhm @ 4A, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 30nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 527pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 156W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (D²Pak)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHB , SIHB8N

dokumendid SIHB8N50D-GE3

andmelehe : SIHB8N50D-GE3.pdf

Seotud tooted SIHB8N50D-GE3 Vishay Siliconix

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