SQD50N05-11L_GE3 - MOSFET N-CH 50V 50A TO252

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SQD50N05-11L_GE3

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ABC-SQD50N05-11L_GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 50V 50A TO252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

794290 Pieces

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~~USD 0.41209~~

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ABC Semiconductor on SQD50N05-11L_GE3 laos müüa.

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spetsifikatsioonid SQD50N05-11L_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQD50N05-11L_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 50V 50A TO252

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 50V

Praegune - pidev äravool (id) @ 25 ° C : 50A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 11 mOhm @ 45A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 52nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2106pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 75W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252AA

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQD50 , SQD50N05

dokumendid SQD50N05-11L_GE3

andmelehe : SQD50N05-11L_GE3.pdf

Seotud tooted SQD50N05-11L_GE3 Vishay Siliconix

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