DMN3016LDN-13 - MOSFET 2 N-CH 9.2A VDFN3030-8

Tootja arv

DMN3016LDN-13

Sisemine osa number

ABC-DMN3016LDN-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET 2 N-CH 9.2A VDFN3030-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3237626 Pieces

Viide Hind

~~USD 0.1011~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMN3016LDN-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN3016LDN-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN3016LDN-13

tootja : Diodes Incorporated

kirjeldus : MOSFET 2 N-CH 9.2A VDFN3030-8

seeria : -

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : -

Praegune - pidev äravool (id) @ 25 ° C : 9.2A (Ta)

Rds sees (max) @ id, Vgs : 20 mOhm @ 11A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11.3nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1415pF @ 15V

Võimsus - max : -

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerVDFN

Tarnija seadme pakett : V-DFN3030-8 (Type J)

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN3 , DMN301

dokumendid DMN3016LDN-13

andmelehe : DMN3016LDN-13.pdf

Seotud tooted DMN3016LDN-13 Diodes Incorporated

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